Precipitation of iron in multicrystalline silicon wafers at 400-700C

Anyao Liu (Centre for Sustainable Energy Systems)

SOLAR SEMINAR SERIES

DATE: 2013-09-12
TIME: 16:00:00 - 17:00:00
LOCATION: Ian Ross Seminar Room
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ABSTRACT:
The internal gettering of iron in silicon via iron precipitation at low processing temperatures is known to improve solar cell efficiencies. In this paper, we present experimental results on quantitatively analysing the precipitation of interstitial Fe in multicrystalline silicon wafers during 400oC-700oC thermal annealing processes. The concentration and the spatial distribution of interstitial Fe in mc-Si were measured by the photoluminescence imaging technique. It was found that, apart from the processing temperature, the Fe precipitation time constant is highly dependent on the supersaturation ratio and the density and types of the precipitation sites.

BIO: