Boron-oxygen defect imaging in p-type Czochralski silicon

Siew Lim (Centre for Sustainable Energy Systems)

SOLAR SEMINAR SERIES

DATE: 2013-08-22
TIME: 16:00:00 - 17:00:00
LOCATION: Ian Ross Seminar Room
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ABSTRACT:
In this presentation, we will discuss a method for determining the effective boron-oxygen related defect density on Czochralski-grown silicon wafers accurately using photoluminescence imaging. Also, by combining a recently developed dopant density imaging technique and microscopic Fourier transform infrared spectroscopy measurements of the local interstitial oxygen concentration Oi, the BO-related defect density, Oi, and the boron dopant density from the same wafer were all determined with spatial resolution of 160 microns. The results confirm the dependencies of the BO-related defect density on Oi and the boron dopant density and demonstrate a new method for studying the defect.